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Diese Entspannung am Penis wird steif. Schau hier Erektile Dysfunktion ED ist jedoch fettleibig, der Penis fest genug, Erektionsprobleme zu bekommen oder jedes Stadium des Penis zu behandeln und die Ursachen von Stress zu hinterlassen. Das Blut, das aus diesen Faktoren oder mehreren von ihnen besteht. Ein Dauerthema. Ein peinliches Problem, psychologische Faktoren verursachen ED. Eine Erektion, um eine zugrunde liegende Ursache zu erreichen.

Erektile Dysfunktion ED ist der Penis. Weniger oft. Register card. Choose which method you want to use to confirm your purchases. Download Access App.

Next, activate the Access App. Activate Access App. Saving your mobile number in E-Banking. Further information All help topics on the 3-D Secure procedure. This range of memory types could include sections within a gate-assisted sustaining chip and floating-gate sections as an alternative to charge-trapping and many other variations or combinations thereof. For better performance, the tunnel oxide could be engineered for improved writing speed and maintenance, as described by Hang-Ting Lue et al.

Another variation is to avoid tunnel oxide, as described by Dong-I1 Moon et al. An optimal enhancement to these ‘catch charge’ storage options is to monitor the level of charge during a read operation. Such monitoring could direct the refresh operation to reduce overall device power consumption.

Such monitoring could operate the refresh for the cell, column, ridge, or unit. The 8C illustrates an alternative for curved channeling. In this alternative, burr formation, which occurs in the 3B is shown, a selective partial etching of the channel regions similar to that follow, in the 3C is shown.

Such isotropic selective etching of the channel regions could form a curved channel. The 8D illustrates forming a gate stack over the channels. An advantage of such a shaped channel is that for the same layer thickness, the effective charge trapping surface is longer a geodesic line rather than a direct line path , allowing better separation for charge storage, such as mirror-bit storage locations, resulting in potentially higher storage density , This could be done for the full ridge length as shown or selectively on some of the memory channel columns.

Gate-Stapel zu bilden. Another alternative is to use isotropic selective etching of the P regions to include floating gates for the first gate stack or the second gate stack, or first for the first gate stack and then for the second gate stack form. It should be noted that by adding the polysilicon as the floating gate in the intended channel of only, first for the first gate stack, the floating gate is made locally per channel and is not continuous along the ridge.

The 8E illustrates partial undercut etching of the channel region wells similar to those in the 3C and 8C are shown. If necessary, a corner rounding process can be added to mitigate the corner effects. Die 8F illustriert das Bilden der Tunneloxidschicht gefolgt von isotroper Deposition des Materials des schwimmenden Gates, wie Polysilizium.

The 8F illustrates forming the tunnel oxide layer followed by isotropic deposition of the floating gate material, such as polysilicon. And then, anisotropic etching of the ‘excess’ polysilicon material in the valleys can be accomplished using the topside nitride hardmask, thus, ‘islands’ of polysilicon material at the intended locations be left. The 8G illustrates completing the formation of the floating gate structure by deposition deposition, deposition of the control oxide and control gates which completes the formation of the base of the floating gate stack structure.

The removal of the tunneling oxide for the floating gate is somewhat more difficult due to the ability of the trapped charge to escape back quickly. The solution is to add a step of etch back to the polysilicon deposition for the floating gate such that the polysilicon is substantially completely trapped within the curve of the P channel formed by the selective isotropic etching of the channel regions as with respect to at least the 8C was discussed.

Gate als Oberseiten Haupt Gate wirkt. Another alternative is to etch a part but not the complete second channel, such as a P type region, before adding the second gate stack. The technique uses side gates to manipulate the charge storage sites, increasing the bit capacity per facet. This technique could be implemented here, with the 2nd gates acting as a right side gate and left side gate, while the 1st gate acts as a top main gate.

Die Silizid-Region kann direkt in Kontakt mit dem Kanal sein. The silicide region may be in direct contact with the channel. If desired, the silicidation region may be substantially close to but not in contact with the channel, with the channel and silicide region separated by a segregated n-type region.

Some techniques for these settings will be presented later herein. The starting point could be similar to the one in the 8E is shown. The 8H illustrates the structure after depositing a protective oxide to the wells 8E to substantially fill the channel region.

The 8I illustrates the structure after the deposition of silicide material such as Co, Ti, Ni or other metals as desired. The deposition can be performed using ALD for precision control or by other techniques such as sputtering and evaporation.

The use of ALD for the silicidation material would fit well with the 3D NOR structure herein and could fit well with other advanced applications of 2D or 3D structures. ALD allows atomic level control of the deposited material for the ensuing silicidation process to support lower device variations.

Johnson et al. It might be desirable to tune the process so that the silicidation would not go into the channel regions, which is known as a connection tip. Die 8K illustriert die Struktur nach dem Entfernen von unbenutztem Silizidationsmetall und des Schutzoxids , was die Kanalregionen freilegt.

The 8K illustrates the structure after removal of unused silicidation metal and protective oxide what the channel regions exposes. Some techniques for such silicidation and the use of silicidation for storage applications have been developed by Chaochao Fu et al. The use of a Schottky barrier to improve the charge trapping device has been used by Chun-Hsing Shih et al. Therefore, the trapped charge profile can be located closer to the junction region, resulting in more pronounced state differences for mirror-bit applications.

An additional benefit is in reading a mirror-bit structure by allowing reading of both bits with a single cycle, which supports the use of mirror-bit density doubling for high-speed applications, as described in a document of Zhou Fang et al. Patent 8,, is described, all of which is incorporated herein by reference. For the 3D NOR structure processing, and for a selective etching of the channel region in the 8E to allow the multilayer structure of 3A be made of silicon over SiGe.

Etching techniques, which are very selective between SiGe and silicon, are well known. The 3C and SiGe is an attractive channel material for its higher hole mobility. Additionally, the use of SiGe as the channel material may facilitate hot carrier programming and hot hole quenching due to its lower energy bandgap. So etwas wurde beschrieben von Sung-Jin Choi et al.

This was described by Sung-Jin Choi et al. Both SB and DSSB allow a very significant reduction in write time for the same tunnel oxide thickness, and thus allow for a high storage time along with a high speed write time.

This could make the memory structure very attractive to replace DRAM type memory applications where very fast memory access for reading and writing is very important. Combining silicidation according to these techniques with a thinner tunnel oxide could allow for fast access with still sufficient retention, thus reducing device real performance, operational overhead, and complexities.

An additional benefit is the added flexibility in constructing the 3D NOR structure. If desired, the exposed surface of the Ge or SiGe channel could be passivated by a capping layer consisting of Si, for example, followed by gate oxide stacking. This will reduce the interface states and relative noise and improve channel mobility. Alternatively, the exposed surface of the Ge or SiGe channel may be in direct contact with the charge trapping layer.

Alternativ kann der Transistor mit einer Dotant-segregierten Schottky-Barriere oder normalen Schottky-Barriere Source und einem konventionell dotierten Drain gebildet werden. So etwas wurde in einem Dokument von Yu-Hsuan Chen et al. Alternatively, the transistor may be formed with a dopant segregated Schottky barrier or normal Schottky barrier source and a conventionally doped drain.

Such an asymmetric memory structure could also exhibit less ambipolar transport characteristics. In addition, such an asymmetric transistor could be designed for faster time or lower voltage quenching conditions. This was reported in a document by Yu-Hsuan Chen et al. De Marchi et al. Krauss et al. Such an alternative to JLT For such a thing, the source or the drain or both could be left uncovered and form a DSSB transistor or SB transistor accordingly.

Such a transistor could be formed horizontally by the silicidation process, in which the channel is just protected from silicidation, or the channel and drain are protected from silicidation for asymmetric ASSBT. The use of multiple gates in SB transistors, as presented in these documents, provide electronic control of SB transistors, thereby controlling its ambipolarity to obtain an N type or P type unipolar transistor.

Low doping of the gate bias could help to increase the transistor channel control, allowing further development of the vertical transistors and the horizontal transistors within the 3D NOR structure. This allows multiple device setting options for better support of different targeted applications.

Die 9A illustriert eine Variation zu der Struktur von 4A. The 9A illustrates a variation on the structure of 4A , On a substrate become the multilayer burrs and valleys formed as with respect to 3B has been described.

Then you can use hard mask strips perpendicular to the burr direction for the subsequent damascene gate stacking process. Metall-Gate, was den 1.

Gate-Stapel bildet. The 9C illustrates the structure after removal of the hard mask as used to form the damascene gate stack. Die 9D illustriert die Struktur nach der optionalen Kanalvertiefung oder -ausnehmung, wie vorher hierin beschrieben wurde. The 9D illustrates the structure after the optional channel depression or recess as previously described herein.

Die 9E illustriert die Struktur nach der Deposition des 2. The 9E illustrates the structure after the deposition of the 2nd gate stack. Gate-Stapel als auch dem 1. The 9F illustrates the structure after CMP of both the second gate stack and the first gate stack, thus forming independent gates.

Gate-Stapels und des zweiten Gate-Stapels darstellt. The 10A illustrates a horizontal section through the channel P layer what a section of the 1st gate stack and the second gate stack represents. The 10B illustrates a horizontal section along the channel P layer what the recess in the channel represents.

The 3D NOR development for a specific application could include any of the techniques presented herein and their combinations. One of such combinations could be the use of the un-indented storage column with a thinner tunnel oxide.

Thinner tunneling is used for shorter maintenance, faster access with higher refresh rate. Using the page word lines and could be a doubling of the number of memory locations with appropriate bias allow the side gates, which are also provided to give them a better control of the electric field of the memory cell s , in the non-indented memory column and correspondingly controlling the memory location laterally with respect to the channel region.

By providing this memory for a shorter storage time, it lessens the effect of stored charge movement over time as it is often refreshed.

The natural distribution of a charge within the charge trapping layer is highly dependent on time and temperature. Memory cells that function as a DRAM could make use of multiple charge storage sites per facet, thereby increasing effective memory storage and density. Two or more digits could therefore pass through the side gates and to be controlled. Such a density increase could be used as the memory access time decreases. It could be made symmetrical on both the odd and even sides, which simplifies the associated processing, or unbalanced.

The 10E Illustrates bit locations that are achievable when the indented gates have second gates and or be used. Or a sliding field could have a negative voltage, for example -2v to the right indented gate be created. Those could also be applied together or in different time and intensity shaped pulses.

Developing a memory product could include the interchange between the many parameters, such as memory density, access time, sense amplifier complexity, retention time, and so forth. An additional developmental alternative to the 3D NOR memory is to use the indentation concept to reduce cell-to-cell interference.

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